日本电子制造商东芝公司推出了一种基于碳化硅（SiC）的新型金属氧化物半导体场效应晶体管（MOSFET），主要应用于太阳能逆变器和电池存储系统。
该公司表示，新的MOSFET可能有助于逆变器制造商减小其产品的尺寸及重量。
该公司还提到：“高频运行可以减少其他系统组件的体积和重量，如散热器和过滤器等。”
新产品包含一个2200 V肖特基势垒二极管（SBD），主要应用于1500 V（直流电）两电平逆变器。据制造商介绍，两电平设备相比三电平逆变器，具有更少的开关模块，因此系统体积更小、质量更轻。
据报道，SiC模块具有低传导损耗和低漏源电压的特点。它们导通和关断的开关损耗也较低，分别为14mJ和11mJ。据称，它们具备低漏感、低热阻特性并内置了热敏电阻。
东芝2200 V SiC MOSFET横截面示意图
图片来源：东芝集团
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